11 results
Structural and optical properties of graphene from green carbon source via thermal chemical vapor deposition
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- Journal:
- Journal of Materials Research / Volume 31 / Issue 13 / 14 July 2016
- Published online by Cambridge University Press:
- 14 June 2016, pp. 1947-1956
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- 14 July 2016
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Effect of point defects on lattice constant in MgO thin film deposited on silicon(0 0 1) substrate: Ab initio method approach using ABINIT code
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- Journal:
- The European Physical Journal - Applied Physics / Volume 58 / Issue 1 / April 2012
- Published online by Cambridge University Press:
- 23 April 2012, 10302
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- April 2012
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1MeV electron irradiation effects of GaAs/Si solar cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 836 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, L6.7
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- 2004
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Initial Stage of Heteroepitaxial Growth of Compound Semiconductor on Si Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 221 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 155
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- 1991
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Room-Temperature CW Operation of SQW Lasers on Si Grown with AiGaAs/AlGaP Intermediate Layers by MoCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 228 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 189
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- 1991
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Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 201
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- 1990
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Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 235
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- 1989
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Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 267
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- 1989
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Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 273
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- 1989
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Growth of Gaas on Si Using Algap Intermediate Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 247
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- 1989
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High Quality GaP Growth on Si Substrates By Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 116 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 319
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- 1988
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